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The 2SK2170-TL-E is an N-channel JFET manufactured by onsemi, designed for surface-mount applications in a compact 3-CPH package. It operates with a drain-source voltage of 50V and supports a maximum continuous drain current of 14mA. The device features a low input capacitance of 6pF at 5V and a gate cutoff voltage of 1.8V at 100µA. With a power dissipation rating of 400mW and a junction temperature range up to 150°C, it meets RoHS standards and is suitable for precision analog circuits requiring high impedance and low noise characteristics.
Verify the complete part number including the -TL-E suffix to ensure correct tape-and-reel packaging and specific binning. Confirm RoHS compliance status and AEC-Q100 qualification if automotive grade is required. Check datasheet revisions for any updates to electrical limits or recommended operating conditions before finalizing procurement specifications.
Select this component when a small-footprint N-channel JFET with 50V breakdown is needed. Ensure the circuit design accounts for the 14mA maximum drain current limit. Compare input capacitance and gate cutoff voltage against system requirements for impedance matching and biasing stability. Verify that the 3-CPH package dimensions fit within the PCB layout constraints.
This device belongs to onsemi's portfolio of discrete JFETs, often used in conjunction with other analog components for signal conditioning. It complements similar devices like the CPH3910 but offers higher voltage ratings. The 2SK series designation indicates its heritage in high-performance RF and analog applications, now adapted for modern surface-mount manufacturing processes.
Direct substitutes may include MMBFJ175LT1G or TF412ST5G from onsemi, though pinout and electrical parameters must be verified. Cross-reference with industry-standard equivalents like 2SK932 or MMBFJ201, ensuring V(BR)GSS and Idss compatibility. Always validate thermal and mechanical fit before substitution.