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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK2736-E is a silicon N-channel DV-L MOS FET designed for high-speed power switching applications. Manufactured by Renesas Electronics Corporation, this single-element device features a 30V drain-source voltage rating and supports a continuous drain current of 30A. It exhibits a low on-resistance of 0.05 ohms, facilitating efficient power management in compact designs.
Feature Summary
- Utilizes DV-L MOS FET technology for enhanced switching performance
- Designed specifically for high-speed power switching operations
- Constructs a robust N-channel silicon metal-oxide semiconductor structure
Applications
- High-speed power switching circuits
- Automotive power management systems
- General-purpose DC-DC converter stages
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with Renesas Electronics or authorized distributors before integration. Confirm that the TOLL package variant matches your thermal and mechanical design requirements. Ensure the component meets all automotive qualification standards if deployed in vehicle electronics. Cross-reference the ordering suffix to guarantee exact electrical parameter alignment with your schematic specifications.
Selection Notes
Select this component when a 30V N-channel MOSFET with 30A current capability is required for high-frequency switching environments. The low on-resistance makes it suitable for applications prioritizing efficiency and minimal conduction losses. Consider the TOLL package for its superior thermal dissipation compared to traditional leaded packages. Evaluate the DV-L technology benefits for faster transition times in demanding power conversion topologies.
Part Context
This part belongs to Renesas' portfolio of silicon N-channel power MOSFETs engineered for automotive and industrial use. The DV-L series emphasizes high-speed switching capabilities alongside ruggedness. It complements other components in power supply designs where compact size and high current density are critical constraints for system miniaturization.
Replacement Considerations
Consult official Renesas documentation for qualified equivalents. Verify pinout compatibility and thermal characteristics when substituting. Ensure any alternative maintains the 30V/30A rating and similar on-resistance values to preserve circuit performance integrity.
