2SK2967(F)

Description：MOSFET N-CH 250V 30A TO3P
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tray

SKU:c25e3dae2404 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 250V 30A TO3P
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tray
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：68mOhm @ 15A, 10V
Vgs(th) (Max) @ Id：3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：132 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5400 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：150W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3P(N)
Package / Case：TO-3P-3, SC-65-3

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2SK2967(F)

Overview

The Toshiba 2SK2967 is a silicon N-channel MOS field-effect transistor utilizing π-MOSV technology, designed for DC-DC converters, relay drives, and motor drives. It features a drain-source voltage rating of 250 V and a continuous drain current of 30 A at 25°C case temperature. The device exhibits a typical drain-source ON resistance of 48 mΩ and a forward transfer admittance of 30 S. Key electrical characteristics include a gate threshold voltage range of 1.5 to 3.5 V and a maximum gate leakage current of ±10 μA. Thermal performance includes a channel-to-case thermal resistance of 0.833 °C/W.

Feature Summary

Utilizes π-MOSV technology for enhanced performance in power switching applications.
Features low drain-source ON resistance to minimize conduction losses.
Provides high forward transfer admittance for efficient signal amplification and control.
Supports single pulse avalanche energy handling for robust operation under transient conditions.

Applications

DC-DC converter circuits
Relay drive systems
Motor drive implementations

Procurement Notes

Verify the specific ordering suffix and lot number markings on the component body to confirm environmental compliance status, such as RoHS compatibility. Consult official Toshiba documentation or authorized distributors for current availability and exact package specifications. Ensure that design parameters remain within absolute maximum ratings to maintain reliability. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines and application precautions before integration into final products.

Selection Notes

Select this component for applications requiring a 250 V N-channel MOSFET with moderate current handling capabilities up to 30 A. Consider the thermal resistance values when designing heat dissipation strategies, particularly for continuous operation. Evaluate the gate charge requirements against driver capabilities to ensure adequate switching speeds. Verify that the operating voltage and current limits align with the system's peak and steady-state demands to prevent overstress.

Part Context

This device belongs to Toshiba's lineup of silicon N-channel MOS type field effect transistors. It is packaged in a JEDEC-compatible outline, specifically identified as 2-16C1B, which facilitates mounting on heat sinks via the drain terminal. The component is intended for general electronics applications, including industrial and consumer equipment, provided it is not used in unintended high-reliability sectors without explicit permission.

Replacement Considerations

No public confirmed substitute part numbers are documented in the source material. Users must consult Toshiba sales representatives or official replacement guides for compatible alternatives. Do not assume cross-compatibility with other manufacturers' parts without verifying pinout, electrical ratings, and thermal characteristics against the original specifications.