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Product Detailed Parameters
- Description：POWER FIELD-EFFECT TRANSISTOR
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK3111-Z-E1-AZ is a single N-channel power MOSFET manufactured by Renesas Electronics Corporation. It is designed for switching applications in industrial and consumer electronics. The device features a three-terminal configuration with an embossed tape carrier type for automated assembly. It is lead-free compliant, ensuring adherence to environmental standards. The component supports a continuous drain current of 20 amperes, making it suitable for moderate power handling requirements in compact circuit designs.
Feature Summary
- Single N-channel power field-effect transistor architecture
- Lead-free construction for environmental compliance
- Embossed tape packaging for surface mount automation
Applications
- Industrial equipment switching circuits
- Consumer electronic power management
- General purpose low-side switching
Procurement Notes
Verify the complete part number including suffixes against official Renesas documentation to ensure correct package and temperature grade. Confirm that the embossed tape carrier matches your pick-and-place machine specifications. Check for RoHS compliance declarations in the specific datasheet revision. Ensure storage conditions align with moisture sensitivity level requirements before soldering.
Selection Notes
Select this component when a single N-channel MOSFET with 20A capability is required for industrial or consumer applications. Consider the embossed tape format if high-volume automated assembly is planned. Evaluate thermal performance constraints relative to the intended PCB layout. Verify voltage ratings exceed peak operating conditions to ensure reliability.
Part Context
This part belongs to the Renesas single FETs and MOSFETs product line. It is categorized as a power field-effect transistor designed for general switching duties. The manufacturer provides technical documentation detailing electrical characteristics and mechanical dimensions. The component is distinct from discrete diodes or integrated circuits within the broader semiconductor portfolio.
Replacement Considerations
Consult official Renesas substitution guides for verified equivalents. Cross-reference pinouts and electrical parameters carefully. Generic replacements may not match the embossed tape specification or exact thermal profile.
