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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK3116(0)-Z-E1-AZ is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a single channel configuration with a maximum drain current of 7.5 A and a minimum drain-source breakdown voltage of 60 V. The device utilizes metal-oxide semiconductor technology and is designed for high-voltage applications, offering low gate charge and excellent switching characteristics.
Feature Summary
- N-channel DMOS FET structure
- Low gate charge design
- Excellent switching performance
Applications
- Industrial equipment
- Consumer electronics
Procurement Notes
Verify the specific suffix codes to ensure compatibility with required packaging and environmental standards. Confirm that the component meets all relevant regulatory compliance requirements for the intended market. Cross-reference the manufacturer's latest documentation to validate part availability and any potential obsolescence notices before finalizing procurement plans.
Selection Notes
Select this component for circuits requiring efficient high-voltage switching with minimal gate drive power. The low gate charge facilitates faster switching speeds, reducing dynamic losses in power conversion stages. Ensure the thermal management solution supports the device's power dissipation capabilities under continuous operating conditions.
Part Context
This part belongs to the 2SK3116 series of switching N-channel power MOSFETs from Renesas. The series is engineered for robust performance in demanding power electronic environments. The specific variant includes standardized packaging and lead-free construction options suitable for modern assembly processes.
Replacement Considerations
Direct substitutes may include other 60V N-channel MOSFETs with comparable current ratings and package types. Verify pinout compatibility and thermal resistance values when considering alternative components from different manufacturers.
