2SK3132(Q)

Description：MOSFET N-CH 500V 50A TO3P
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube

SKU:374f2563cc94 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 500V 50A TO3P
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：95mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：3.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：280 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：11000 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：250W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3P(L)
Package / Case：TO-3PL

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2SK3132(Q)

Overview

The Toshiba 2SK3132 is a silicon N-channel MOS type field effect transistor utilizing π-MOSV technology. It features a low drain-source ON resistance of 0.07 Ω (typ.) and high forward transfer admittance of 33 S (typ.). The device supports a drain-source voltage of 500 V, DC drain current of 50 A, and pulse drain current of 200 A. Gate threshold voltage ranges from 2.4 to 3.4 V. Thermal characteristics include a channel-to-case thermal resistance of 0.5 °C/W and a maximum channel temperature of 150°C.

Feature Summary

Utilizes π-MOSV technology for enhanced performance in chopper regulators and motor drives
Features low drain-source ON resistance and high forward transfer admittance
Supports high avalanche energy ratings with robust switching capabilities

Applications

Chopper regulator circuits
DC-DC converter designs
Motor drive systems

Procurement Notes

Verify RoHS compatibility status through official Toshiba sales representatives, as markings indicate specific lot number variations. Confirm environmental compliance details directly with the manufacturer before procurement. Ensure handling precautions are followed due to electrostatic sensitivity. Review the latest Toshiba Semiconductor Reliability Handbook for derating concepts and methods prior to integration.

Selection Notes

Select this component for applications requiring high voltage tolerance and significant current handling capabilities. Consider the thermal resistance values when designing heat dissipation strategies. Evaluate the gate threshold voltage range against control circuit requirements. Assess switching times and total gate charge parameters for high-frequency operation suitability.

Part Context

This device belongs to Toshiba's silicon N-channel MOSFET lineup designed for power electronics. It is manufactured using specialized π-MOSV process technology. The component is housed in a TOSHIBA 2-21F1B package. Commercial production began in September 1998. The part is intended for industrial power conversion and motor control applications.