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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK3140-E is a silicon N-channel MOS FET manufactured by Renesas Electronics Corporation. It is designed for switching applications, featuring an output current capability of up to 100 mA and support for various output voltages including 3.3 V, 5 V, 6 V, 8 V, 9 V, 10 V, 12 V, 15 V, 18 V, and 24 V. The device integrates thermal overload protection and short-circuit protection, requiring no external components for these functions. It is available in AC and C selection options with output voltage tolerances of ±4% and ±8%, respectively.
Feature Summary
- Integrates thermal overload protection for enhanced operational safety
- Includes built-in short-circuit protection capabilities
- Eliminates the need for external protective components
- Offers selectable output voltage accuracy levels
Applications
- Voltage regulation circuits
- Power supply modules
- Electronic switching systems
Procurement Notes
Verify the specific suffix (AC or C) to confirm the output voltage tolerance requirement for your design. Ensure the selected variant matches the required output voltage level from the supported range. Confirm package type and pinout compatibility during integration. Check RoHS compliance status if environmental regulations apply to your project. Validate that the integrated protections meet your system's safety standards without additional circuitry.
Selection Notes
Choose between AC and C selections based on the required output voltage precision. The AC option provides tighter tolerance for sensitive applications, while the C option offers broader tolerance. Consider the maximum output current requirement to ensure the device handles the load. Evaluate the operating temperature range against your environmental conditions. Verify that the internal protections are sufficient for your fault scenario handling needs.
Part Context
This component belongs to the family of silicon N-channel MOS FETs produced by Renesas. These devices are engineered for efficient power management and switching tasks. The product line emphasizes reliability through integrated protection features. It serves as a compact solution for designers seeking to minimize external component count. The technology supports stable performance across various industrial and consumer electronics applications.
Replacement Considerations
Publicly confirmed substitute part numbers for this specific model are not available in the provided documentation. Cross-referencing should be performed using key parameters such as N-channel configuration, 100 mA output current, and integrated protection features. Compatibility must be verified against voltage tolerance and package specifications.
