ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANSISTOR
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK3353-Z-E1-AZ is an N-channel power MOSFET manufactured by Renesas Electronics. It features a maximum drain-to-source voltage of 60 V and a continuous drain current rating of 82 A at a case temperature of 25°C. The device exhibits super low on-state resistance, with a maximum value of 9.5 mΩ at VGS = 10 V and ID = 41 A, or 14 mΩ at VGS = 4 V and ID = 41 A. It includes a built-in gate protection diode and has a total power dissipation capability of 95 W at TC = 25°C.
Feature Summary
- Super low on-state resistance for high efficiency switching
- Built-in gate protection diode for ESD safeguarding
- Low input capacitance to support fast switching speeds
Applications
- High current switching applications
- Power supply circuits
- Motor control systems
Procurement Notes
Verify the specific package variant (TO-220AB, TO-262, TO-263, or TO-220SMD) required for your design, as the base part number corresponds to multiple physical packages. Confirm the quality grade classification matches your application requirements before finalizing procurement. Ensure compliance with export control laws if applicable.
Selection Notes
Select this component when designing circuits requiring robust N-channel MOSFET performance with high current handling capabilities up to 82 A. Consider the thermal management requirements carefully, as power dissipation drops significantly from 95 W at 25°C case temperature to 1.5 W at 25°C ambient temperature. Evaluate the gate drive voltage requirements against the specified RDS(on) thresholds.
Part Context
This component belongs to the 2SK3353 series of N-channel MOS Field Effect Transistors originally developed by NEC Electronics Corporation, which merged into Renesas Electronics in 2010. The series is designed specifically for high-current switching applications, offering various package options including through-hole and surface-mount configurations to suit different board layout needs.
Replacement Considerations
Direct substitutes include other variants within the 2SK3353 family such as 2SK3353-S, 2SK3353-ZJ, and 2SK3353-Z, depending on the required package type.
