2SK3403(Q)

$2.12

Description：MOSFET N-CH 450V 13A TO220FL
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk

SKU:f89718765791 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 450V 13A TO220FL
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：450 V
Current - Continuous Drain (Id) @ 25°C：13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：400mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1600 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：100W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220FL
Package / Case：TO-220-3, Short Tab

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2SK3403(Q)

Overview

The Toshiba 2SK3403 is a silicon N-channel MOS type field-effect transistor utilizing π-MOSV technology, designed for switching regulator applications. It features a low drain-source ON-resistance of 0.29 Ω (typical) and high forward transfer admittance of 5.8 S (typical). The device supports a maximum drain-source voltage of 450 V and a continuous DC drain current of 13 A at 25°C case temperature. Key electrical characteristics include a gate threshold voltage ranging from 3.0 to 5.0 V and a maximum leakage current of 100 μA at 450 V. Thermal resistance from channel to case is 1.25 °C/W, with a maximum channel temperature of 150 °C.

Feature Summary

Utilizes π-MOSV technology for enhanced switching performance
Features low drain-source ON-resistance for efficient power handling
Supports high avalanche energy ratings for robust operation
Designed specifically for switching regulator applications

Applications

Switching regulators
General electronics applications including computers and office equipment
Industrial robots
Measuring equipment

Procurement Notes

Verify RoHS compatibility status directly with the manufacturer or authorized sales representatives, as indicated by lot number markings on the component. Confirm environmental compliance details prior to integration. Ensure design reliability aligns with Toshiba Semiconductor Reliability Handbook guidelines regarding derating concepts and operating conditions under heavy loads.

Selection Notes

Select this component for designs requiring high-voltage N-channel switching capabilities up to 450 V. Consider the thermal resistance and power dissipation limits when designing heat sinks, ensuring the channel temperature remains within the 150 °C maximum limit. Evaluate the gate threshold voltage range to ensure compatibility with the intended drive circuitry logic levels.

Part Context

This component belongs to the family of silicon N-channel MOS type field-effect transistors manufactured by Toshiba Semiconductor and Storage. It is engineered using π-MOSV technology to optimize performance for power switching environments. The device is distinct from general-purpose small signal transistors due to its specific focus on high-voltage regulation and power management tasks.

Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, voltage ratings, and thermal characteristics against the original specifications.