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Product Detailed Parameters
- Description：MOSFET N-CH 43V 1A SC96-3
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：43 V
- Current - Continuous Drain (Id) @ 25°C：1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：195mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：230 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-96-3, Thin Mini Mold
- Package / Case：SC-96
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Overview
The 2SK3408 is an N-channel MOS field effect transistor designed for switching applications. It features a low on-state resistance and can be driven directly by a 4.0 V power source. The device includes a built-in gate-to-source protection diode against electrostatic discharge. Key electrical parameters include a drain-to-source voltage of 43 V, a DC drain current of 1.0 A, and a maximum total power dissipation of 0.20 W at 25°C ambient temperature. The on-state resistance is specified as 195 mΩ maximum at VGS = 10.0 V and ID = 0.5 A.
Feature Summary
- Capable of direct drive from a 4.0 V power source
- Features low on-state resistance for efficient switching
- Includes a built-in gate-to-source protection diode against ESD
Applications
- Power switch for dynamic clamp of relay
- General purpose switching circuits
Procurement Notes
Verify the specific ordering suffix to confirm package type and marking details. Confirm the quality grade (Standard, High Quality, or Specific) matches the intended application requirements. Check for any updates regarding product availability or lifecycle status through official Renesas Electronics channels before finalizing procurement plans.
Selection Notes
Select this component when a low-voltage drive capability is required alongside low conduction losses. Ensure the design accommodates the absolute maximum ratings, particularly the drain current and power dissipation limits under expected thermal conditions. Consider the built-in ESD protection feature when evaluating external circuit complexity.
Part Context
This part is an N-channel MOSFET manufactured by Renesas Electronics Corporation. It belongs to the category of discrete semiconductor devices used primarily for power switching functions. The device was originally developed by NEC Electronics Corporation before the merger that formed Renesas Electronics.
Replacement Considerations
Consult official Renesas documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' parts without verifying pinout, electrical characteristics, and package dimensions.
