2SK3447TZ-E

$0.43

Description：2SK3447TZ-E - SILICON N CHANNEL
Series：-
Mfr：Renesas
Package：Bulk

SKU:1e3386fe08fa Category: Single FETs, MOSFETs Brand: Renesas

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Product introduction

Product Detailed Parameters

Description：2SK3447TZ-E - SILICON N CHANNEL
Series：-
Mfr：Renesas
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：1.95Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：4.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：85 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：150°C
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92MOD
Package / Case：TO-226-3, TO-92-3 Long Body

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2SK3447TZ-E

Overview

The 2SK3447TZ-E is a silicon N-channel power MOSFET manufactured by Renesas Electronics. It features a TO-92MOD through-hole package with three leads. Key electrical parameters include a drain-source voltage (V_DSS) of 150 V, a continuous drain current (I_D) of 1 A at ambient temperature, and a maximum on-resistance (R_DS(on)) of 1950 mΩ at a gate-source voltage of 10 V. The device has a power dissipation rating of 900 mW at ambient temperature and includes a built-in diode.

Feature Summary

N-channel silicon power MOSFET construction
Integrated body diode configuration
Through-hole TO-92MOD package design

Applications

Industrial equipment switching
Consumer electronics power management

Procurement Notes

Verify the component status as obsolete before procurement planning. Confirm package dimensions and lead count match system requirements. Ensure compatibility with existing thermal management solutions given the 900 mW dissipation limit. Check for valid replacement parts if supply chain continuity is required.

Selection Notes

Select this component for low-current switching applications requiring 150 V blocking capability. The high R_DS(on) limits suitability for high-power loads. Verify that the TO-92MOD package fits the PCB layout constraints. Consider thermal derating curves for operation above ambient temperature conditions.

Part Context

This part belongs to Renesas' discrete semiconductor product line focusing on single power MOSFETs. It is designed for general-purpose switching tasks where moderate voltage handling and compact through-hole mounting are necessary. The series emphasizes reliability in industrial and consumer environments.