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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK3457(2)-AZ is a switching N-channel power MOSFET manufactured by Renesas Electronics Corporation. It utilizes DMOS technology to deliver low gate charge and excellent switching performance. The device is designed for high-efficiency power applications requiring reliable operation.
Feature Summary
- N-channel DMOS FET construction
- Low gate charge characteristics
- Excellent switching performance
Applications
- Power switching circuits
- DC-DC converters
- Motor control systems
Procurement Notes
Verify the specific suffix (2)-AZ against official Renesas documentation to confirm package type and tape/reel specifications. Ensure the component matches the active product status indicated in current datasheets before procurement.
Selection Notes
Select this component for applications prioritizing low gate charge and fast switching speeds. Confirm thermal requirements and voltage ratings align with the system design constraints using the official electrical characteristics table.
Part Context
This part belongs to the discrete semiconductor category, specifically single FETs and MOSFETs. It is an active product from Renesas Electronics America Inc, distinct from obsolete variants like the 2SK3457-S17-AY.
Replacement Considerations
Consult official substitution guides for compatible N-channel power MOSFETs. Verify pinout compatibility and electrical parameters before replacing the original component.
