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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK3481(0)-Z-E1-AZ is an N-channel MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 36 A at 25°C case temperature. The device utilizes a TO-251AA package with a maximum power dissipation of 50 W at the case. Key electrical characteristics include a gate charge (Qg) of 72 nC at 10 V, an input capacitance (Ciss) of 3600 pF at 10 V, and a maximum gate-source voltage (Vgs) of ±20 V. The component supports a junction temperature up to 150°C and operates within standard industrial temperature ranges.
Feature Summary
- N-channel enhancement mode MOSFET construction for efficient switching applications
- High current handling capability suitable for power management circuits
- Robust thermal performance with specified power dissipation ratings
- Low gate charge characteristics for reduced driving power requirements
Applications
- DC-DC converter circuits
- Motor control systems
- Power supply output stages
Procurement Notes
Verify the specific suffix codes against official Renesas documentation to confirm exact binning or testing variations. Confirm RoHS compliance status as per the latest datasheet revision. Ensure the TO-251AA package dimensions match your PCB footprint requirements. Check for any lifecycle notices such as Last Time Buy or Obsolescence warnings before finalizing procurement plans.
Selection Notes
Select this component when a 100 V N-channel MOSFET with high current capacity is required in a TO-251AA package. Compare on-resistance values at your specific operating gate voltage to ensure efficiency targets are met. Consider thermal resistance parameters for your heatsinking strategy. Verify that the gate drive voltage aligns with the specified thresholds for optimal Rds(on) performance.
Part Context
This part belongs to the Renesas 2SK3482 series family, sharing similar electrical specifications and package types. It is designed for general-purpose power switching applications requiring reliable N-channel MOSFET performance. The product line focuses on providing robust semiconductor solutions for industrial and consumer electronics markets.
Replacement Considerations
Consult official Renesas substitution guides for direct replacements. Cross-reference with other manufacturers' 100 V, 36 A TO-251AA N-channel MOSFETs only if pinout and electrical parameters match exactly. Verify thermal and switching characteristics before implementing any alternative components.
