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Product Detailed Parameters
- Description：MOSFET N-CH 50V 100MA SSSMINI3
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
- Rds On (Max) @ Id, Vgs：12Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.5V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±7V
- Input Capacitance (Ciss) (Max) @ Vds：12 pF @ 3 V
- FET Feature：-
- Power Dissipation (Max)：100mW (Ta)
- Operating Temperature：125°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SSSMini3-F1
- Package / Case：SOT-723
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Overview
The Panasonic 2SK3547 is a silicon N-channel MOSFET designed for switching applications. It features a Mini3-F1 package and includes a built-in gate-protection diode. Key electrical parameters include a drain-source voltage of 50 V, a continuous drain current of 100 mA, and a peak drain current of 200 mA. The device exhibits low on-resistance, ranging from 6 to 12 Ω at VGS = 4.0 V. It supports high-speed switching with turn-on and turn-off times of approximately 200 ns under specified test conditions.
Feature Summary
- High-speed switching capability suitable for wide frequency band applications
- Integrated gate-protection diode for enhanced circuit reliability
- Miniature SMD packaging for space-constrained designs
Applications
- General electronic equipment
- Office equipment
- Communications equipment
- Measuring instruments
- Household appliances
Procurement Notes
Verify the specific lifecycle status before procurement, as this component may be classified under maintenance or discontinued stages. Confirm that the latest product standards align with your design requirements. Ensure compliance with RoHS directives. Consult official sales channels for availability updates and final specification validation prior to ordering.
Selection Notes
Select this component for low-voltage, low-current switching tasks requiring fast response times. The 50 V rating and 100 mA current limit define its operational boundaries. Consider the thermal constraints, as power dissipation is limited to 100 mW. Verify that the Mini3-F1 package dimensions fit the target PCB layout and that the gate threshold voltage matches the driving logic levels.
Part Context
This part belongs to the category of small signal silicon junction FETs manufactured by Panasonic Electronic Components. It is engineered specifically for general-purpose switching functions in consumer and industrial electronics. The device utilizes standard silicon MOS technology optimized for low power consumption and compact form factors typical of modern surface-mount assemblies.
Replacement Considerations
Consult official Panasonic documentation for verified substitute part numbers. Cross-referencing should prioritize matching electrical characteristics such as voltage ratings, current limits, and package type. No alternative part numbers are explicitly confirmed in the provided source material.
