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Product Detailed Parameters
- Description：MOSFET N-CH 200V 8A TO252
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：430mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：390 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (MP-3Z)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The 2SK3635-Z-E1-AZ is a single N-channel silicon power MOSFET manufactured by Renesas Electronics Corporation. It features a TO-252-3 (DPak) surface-mount package with three leads. The device supports a drain current of 8A and withstands a drain-source voltage of 200V. Its on-resistance is specified at 0.48 ohms. The component is lead-free and supplied in embossed tape packaging, designed for industrial and consumer switching applications.
Feature Summary
- N-channel silicon construction for high-efficiency power switching
- Surface-mount TO-252-3 package design
- Lead-free compliant manufacturing
Applications
- Industrial power switching circuits
- Consumer electronics power management
- High-efficiency DC-DC conversion stages
Procurement Notes
Verify the complete part number including suffixes to ensure correct packaging and compliance status. Confirm that the embossed tape carrier type matches your automated assembly requirements. Check for specific RoHS or REACH documentation if regulatory compliance is mandatory for your final product certification process.
Selection Notes
Select this component when a 200V rating and 8A continuous current capability are required in a compact surface-mount form factor. The 0.48 ohm on-resistance offers a balance between conduction loss and cost for general-purpose switching tasks. Ensure thermal management solutions accommodate the DPak package's heat dissipation characteristics during operation.
Part Context
This device belongs to the 2SK3635 series of N-channel power MOSFETs from Renesas. It shares similar voltage and current specifications with other members of the family but differs in package style and specific electrical tolerances. The series targets medium-power applications requiring reliable switching performance in constrained board spaces.
Replacement Considerations
The 2SK3634-AZ is a documented alternative within the same manufacturer lineup. Verify pinout compatibility and exact on-resistance values before substitution, as the 2SK3634-AZ operates in a TO-251-3 package with different thermal properties.
