2SK3704-1EX

$0.94

Description：MOSFET N-CH
Series：*
Mfr：onsemi
Package：Bulk

SKU:5b803e21fbd5 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH
Series：*
Mfr：onsemi
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK3704-1EX

Overview

The onsemi 2SK3704-1EX is an N-channel MOSFET designed for power switching applications. It features a drain-source breakdown voltage of 60 V and supports a continuous drain current of 45 A. The device exhibits a low on-resistance (Rds(on)) of 14 mOhms, ensuring efficient conduction with minimal power loss. Packaged in a standard configuration suitable for surface-mount assembly, this component integrates robust performance characteristics required for high-current circuit protection and load management tasks.

Feature Summary

N-channel enhancement mode construction
Low on-state resistance for efficiency
High continuous current handling capability

Applications

Power distribution units
Load switch circuits
Battery protection modules

Procurement Notes

Verify the specific package outline and thermal characteristics against your PCB layout requirements before finalizing the design. Confirm that the operating temperature range aligns with your system's environmental conditions. Ensure proper gate drive voltage levels are maintained to achieve the specified Rds(on) performance. Cross-reference the manufacturer datasheet for detailed mechanical dimensions and soldering profiles to guarantee reliable assembly and long-term operational stability.

Selection Notes

Select this component when a 60 V rating and 45 A current capacity are required. The low Rds(on) makes it suitable for minimizing conduction losses in high-efficiency designs. Consider thermal management strategies due to the high current capabilities. Evaluate the package type compatibility with existing manufacturing processes. Compare alternative devices if higher voltage ratings or different packaging formats are necessary for the specific application constraints.

Part Context

This part belongs to the discrete semiconductor category, specifically within the single FET/MOSFET segment. It serves as a fundamental building block for power electronics, providing switching functionality in various industrial and consumer electronic systems. The component is manufactured by onsemi, a leading provider of energy-efficient power solutions. Its design focuses on balancing electrical performance with thermal reliability for demanding power management applications.