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Product Detailed Parameters
- Description：MOSFET N-CH 1500V 4A TO3PF-3
- Series：-
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1500 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：790 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 65W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PF-3
- Package / Case：SC-94
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Overview
The 2SK3748-1E is an N-channel power MOSFET manufactured by onsemi, housed in a TO-3PF-3L package. It features a drain-to-source voltage rating of 1500 V and a continuous drain current of 4 A at 25°C case temperature. The device exhibits a maximum static drain-to-source on-state resistance of 7 Ω at 10 V gate drive. Key electrical characteristics include a total gate charge of 80 nC and a single-pulse avalanche energy capability of 165 mJ.
Feature Summary
- Ultrahigh-speed switching with low ON-resistance and low input capacitance
- High reliability achieved through the adoption of an HVP process
- Good attachment workability provided by a mica-less package design
- Guaranteed avalanche resistance for robust operation under stress
Applications
- High-voltage power conversion circuits
- Industrial motor control systems
- Switching power supplies requiring ultrahigh-speed performance
Procurement Notes
Verify component authenticity and datasheet alignment before integration. Confirm that the TO-3PF-3L package dimensions match the target PCB footprint. Ensure thermal management strategies account for the specified allowable power dissipation limits at operating temperatures. Validate that the 1500V rating exceeds the peak circuit voltages to maintain safety margins.
Selection Notes
Select this component for applications demanding high breakdown voltage combined with fast switching speeds. The TO-3PF-3L package facilitates direct mounting to heatsinks for effective thermal management. Consider the 7 Ω RDS(on) when calculating conduction losses at the intended load current. Verify that the gate drive voltage supports the 10 V specification for optimal performance.
Part Context
This device belongs to the 2SK3748 series of N-channel power MOSFETs from onsemi. It utilizes a specialized HVP process to ensure high reliability and withstands significant electrical stresses. The product is designed for environments where high voltage isolation and rapid switching transitions are critical requirements.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Ensure any replacement matches the 1500V rating, 4A current capacity, and TO-3PF-3L package outline. Verify that thermal and electrical characteristics align with the original design specifications.
