2SK3811-ZP-E1-AY

$3.62

Description：MOSFET N-CH 40V 110A TO263
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:33b4f583acf9 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 110A TO263
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.8mOhm @ 55A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：260 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：17700 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta), 213W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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2SK3811-ZP-E1-AY

Overview

The 2SK3811-ZP-E1-AY is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage (VDS) of 40V and a continuous drain current (ID) of 110A at case temperature. The device exhibits a typical on-resistance (RDS(on)) of 1.8mΩ. It is housed in a surface-mount TO-263/D2PAK package with three leads. Key electrical parameters include a maximum gate charge of 260nC at 10V and a maximum input capacitance of 17700pF at 10V.

Feature Summary

N-channel power MOSFET architecture optimized for low on-state resistance
High current handling capability suitable for power switching applications
Surface-mount TO-263 package design for thermal efficiency

Applications

DC-DC converter circuits
Motor control systems
Power management modules

Procurement Notes

Verify component status as the part may be obsolete or subject to end-of-life notices. Confirm datasheet revisions and packaging details such as tape and reel specifications. Ensure compatibility with existing PCB footprints and thermal management requirements before procurement.

Selection Notes

Select this component for applications requiring 40V rating and high current capacity. Evaluate thermal performance based on the specified power dissipation limits. Consider gate charge characteristics for switching speed requirements in power supply designs.

Part Context

This part belongs to Renesas' power MOSFET portfolio, designed for efficient power conversion. It serves as a replacement for legacy components in industrial and consumer electronics. The TO-263 package facilitates automated assembly and robust heat dissipation.

Replacement Considerations

Check for direct equivalents like the 2SK3811-ZP. Verify pinout compatibility and electrical parameter alignment. Consult official substitution lists for updated alternatives if the primary part is discontinued.