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Product Detailed Parameters
- Description：TRANSISTOR
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The Renesas Electronics 2SK3814 is an N-channel power MOSFET designed for high current switching applications. It features a super low on-state resistance of 8.7 mΩ maximum at VGS = 10 V and ID = 30 A, or 10.5 mΩ maximum at VGS = 4.5 V and ID = 30 A. The device supports a drain-to-source voltage (V_DSS) of 60 V and a continuous DC drain current (I_D(DC)) of ±60 A at TC = 25°C. It offers a total power dissipation of 84 W at TC = 25°C and handles a pulsed drain current of ±240 A. Key electrical characteristics include an input capacitance (C_iss) of 5450 pF typical, a gate charge (Q_G) of 95 nC, and a channel temperature rating up to 150 °C.
Feature Summary
- Super low on-state resistance for efficient power handling
- High current switching capability with robust avalanche energy ratings
- Low input capacitance for improved switching performance
Applications
- High current switching circuits
- Power management systems requiring low conduction losses
- Industrial equipment utilizing N-channel MOSFETs
Procurement Notes
Verify the specific package variant required, as the datasheet lists TO-251 (MP-3) and TO-252 (MP-3Z). Confirm that the application falls within the Standard quality grade unless prior written consent is obtained for Special or Specific grades. Ensure operating conditions remain within absolute maximum ratings to prevent malfunction. Check for RoHS compliance status relevant to the manufacturing date and region.
Selection Notes
Select this component when low on-state resistance is critical for efficiency in high current scenarios. Consider the 60 V drain-to-source voltage limit and 60 A continuous current capacity. Evaluate thermal management requirements based on the 84 W dissipation rating at case temperature. Verify compatibility with gate drive voltages of 4.5 V or 10 V depending on the desired R_DS(on) performance level.
Part Context
The 2SK3814 belongs to the family of N-channel power MOSFETs manufactured by Renesas Electronics Corporation, formerly NEC Electronics Corporation. It is engineered for robust performance in demanding switching environments. The device integrates a body diode and offers significant avalanche energy tolerance, making it suitable for inductive load applications where transient events may occur.
Replacement Considerations
Consult official Renesas documentation for direct pin-compatible substitutes. Verify that any alternative device matches the 60 V V_DSS, 60 A I_D(DC), and package dimensions (TO-251 or TO-252). Ensure thermal resistance and switching characteristics meet or exceed the original specifications.
