2SK3820-DL-1E

Description：MOSFET N-CH 100V 26A TO263-2
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:48bd0800015d Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 26A TO263-2
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：26A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：60mOhm @ 13A, 10V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2150 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：1.65W (Ta), 50W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-2
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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2SK3820-DL-1E

Overview

The 2SK3820-DL-1E is an N-channel power MOSFET in a TO-263-2L package. It features a drain-to-source voltage of 100 V and a continuous drain current of 26 A at 25°C case temperature. The device has a maximum static on-resistance of 60 mΩ at VGS=10V and 80 mΩ at VGS=4V. Key electrical characteristics include a total gate charge of 44 nC, input capacitance of 2150 pF, and avalanche energy rating of 84.5 mJ.

Feature Summary

Low ON-resistance for efficient switching
Ultrahigh-speed switching capability
Avalanche resistance guarantee

Applications

Motor drive systems
DC/DC converters

Procurement Notes

Verify the specific ordering suffix DL-1E to confirm the TO-263-2L package and reel quantity of 800 pieces per reel. Ensure the component meets Pb-Free specifications as indicated in the ordering information. Cross-reference the marking code DL K3820 with the lot number for traceability during incoming inspection.

Selection Notes

Select this component for applications requiring low gate drive voltage support down to 4V. Evaluate thermal management requirements based on the allowable power dissipation limits of 1.65 W at ambient and 50 W at case temperature. Consider the high input capacitance when designing gate drive circuits for optimal switching performance.

Part Context

This part belongs to the 2SK3820 series of N-channel silicon MOSFETs manufactured by onsemi. It is designed as a general-purpose switching device suitable for various power electronics applications. The datasheet provides comprehensive electrical characteristics and absolute maximum ratings for design integration.