2SK545-11D-TB-E

Jfets Overview

The onsemi 2SK545-11D-TB-E is an N-channel Junction Field-Effect Transistor (JFET) designed for low-current analog applications. It features a maximum drain-source voltage of 40V and operates with a drain current of 1 mA. The device offers a transconductance range of 55 to 95 µS and a power dissipation rating of 125 mW. Packaged in the SC-59/CP3 surface-mount format, it supports tape and reel delivery for automated assembly.

Jfets Feature Summary

• N-channel JFET architecture optimized for low-current signal processing
• Surface-mount SC-59/CP3 package design for compact integration
• High input impedance characteristics suitable for precision interfaces

Jfets Applications

• Impedance converter circuits
• Infrared sensor front-ends
• Low-noise analog input stages

Jfets Procurement Notes

Verify the specific ordering suffix -11D-TB-E against official onsemi documentation to confirm the exact pinout configuration and packaging specifications. Ensure that the selected variant matches the required thermal and electrical parameters for the target application environment before finalizing procurement orders.

Jfets Selection Notes

Select this component when designing circuits requiring high input impedance and low noise performance in small form factors. Consider the 40V breakdown voltage and 1 mA current limits to ensure operation within safe boundaries for sensitive analog signal paths.

Jfets Part Context

This part belongs to the 2SK545 series of N-channel JFETs from onsemi. These devices are engineered to provide stable performance in analog signal conditioning roles, offering reliable operation across standard industrial temperature ranges while maintaining consistent electrical characteristics.

Jfets Replacement Considerations

Cross-reference with equivalent N-channel JFETs such as the 2SK3372GUL if physical footprint compatibility or specific parameter matching is required for board-level substitutions.