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The Central Semiconductor Corp 3N255-M is a single-phase, full-wave bridge rectifier diode constructed from silicon. It provides a maximum average forward output current of 2.0 A and supports a repetitive peak reverse voltage of 200 V. The device features a maximum non-repetitive peak forward surge current of 60 A and a maximum forward voltage of 1.1 V at the rated current. It operates within a junction temperature range of -55 °C to +150 °C and utilizes a Case B-M plastic epoxy package with an inline terminal configuration.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm compliance status and RoHS directives prior to integration. Ensure storage conditions maintain component integrity before assembly.
Select this component when a 200 V rating and 2.0 A continuous current are required in a compact inline package. Evaluate thermal management requirements based on ambient temperature derating curves provided in the technical documentation.
This part belongs to the Central Semiconductor general purpose bridge rectifier series, designed for standard rectification tasks. It shares the Case B-M form factor with other variants in the lineup, offering consistent mechanical dimensions across different voltage ratings.
Cross-reference with Vishay 3N255 equivalents or similar Case B-M packages. Verify electrical parameters match exactly, particularly the 200 V reverse voltage and 2.0 A current ratings, before substitution.