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The onsemi 4N25300 is a general-purpose optocoupler featuring a gallium arsenide infrared emitting diode coupled to a silicon phototransistor with an exposed base. It is housed in a standard 6-pin dual in-line package (DIP). The device provides electrical isolation with a rated isolation voltage of 5300 Vrms. Key electrical parameters include a maximum collector-emitter voltage of 30 V, a forward voltage of 1.5 V, and a power dissipation of 250 mW. It operates within a temperature range of -55°C to +100°C.
Verify the specific suffix against official datasheets to confirm pinout and isolation ratings. Confirm RoHS compliance status through current manufacturer documentation. Ensure the procurement channel provides valid traceability for electronic components. Check for any recent product change notices that may affect specifications or availability.
Select this component when a standard DIP-6 form factor is required for through-hole assembly. Consider the 30 V collector-emitter voltage limit for low-voltage logic applications. Evaluate the 5300 Vrms isolation rating for safety requirements. Compare switching speeds if high-frequency operation is necessary, as this is a general-purpose device.
The 4N25300 belongs to the widely used 4N25 series of optocouplers manufactured by onsemi. This series is established for reliable general-purpose isolation tasks. The device utilizes standard semiconductor materials including gallium arsenide and silicon. It represents a legacy solution commonly found in existing designs requiring robust galvanic separation.
The 4N25M is a verified equivalent part number within the same family offering similar functionality and pinout compatibility.