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The onsemi 4N25SR2M is a general-purpose phototransistor optocoupler featuring a single channel in a surface-mount 6-pin DIP package. It integrates an aluminum gallium arsenide infrared emitting diode with a silicon phototransistor. Key electrical parameters include a maximum forward voltage of 1.5V, a collector-emitter saturation voltage of 400mV, and a reverse voltage rating of 6V. The device supports a maximum input current of 60mA and offers an isolation voltage of 7500Vrms. Typical switching characteristics include rise and fall times of 2μs, with a minimum current transfer ratio of 20%.
Verify the specific suffix against official datasheets to confirm package type and tape/reel specifications. Ensure the component meets required insulation coordination standards for the target application. Cross-reference manufacturer part numbers with distributor catalogs to confirm availability and authenticity before procurement.
Select this component when surface-mount processing is required for single-channel isolation applications. Consider the 7500Vrms isolation rating for high-voltage safety requirements. Evaluate the 2μs switching speed against system timing constraints. Confirm that the 60mA input current capability aligns with the driving circuit's output limits.
The 4N25SR2M belongs to the 4N25 series of general-purpose optocouplers manufactured by onsemi. This series provides reliable optical isolation using standard phototransistor technology. The SR2M variant specifically denotes the surface-mount DIP configuration, distinguishing it from through-hole equivalents within the same functional family.
Direct pin-compatible replacements within the same series include the 4N25SM. Verify electrical parameters such as current transfer ratio and isolation voltage when substituting with other manufacturers' parts to ensure circuit compatibility.