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The Toshiba 4N26(SHORT,F) is a single-channel transistor output optocoupler housed in a DIP-6 package. It features an infrared emitting diode coupled to an NPN phototransistor for signal isolation. Key electrical parameters include a collector-emitter breakdown voltage of 30 V, a maximum forward current of 80 mA, and a typical current transfer ratio of 100%. The device supports an operating temperature range from -55 °C to +100 °C and provides a minimum insulation voltage of 2500 Vrms.
Verify the specific suffix (SHORT,F) against the manufacturer's official datasheet to confirm pin configuration and packaging details. Ensure compliance with RoHS and REACH regulations as specified in the latest product documentation. Cross-reference the part number with authorized distributors to validate authenticity and supply chain integrity before procurement.
Select this component when a standard transistor output optocoupler with DIP-6 packaging is required. Consider the 30 V collector-emitter voltage rating and 80 mA forward current limits for circuit design. Verify that the 2500 Vrms insulation voltage meets the safety requirements of the application environment.
This component belongs to the 4N26 series of optocouplers, widely used for general-purpose isolation. The SHORT,F suffix typically indicates specific tape-and-reel packaging or lead form variations compared to standard tube versions. It serves as a legacy replacement for older discrete isolation solutions in established electronic designs.
Direct replacements include Vishay 4N26-X016 and onsemi 4N263SD. Verify pin compatibility and electrical ratings such as CTR and isolation voltage when substituting manufacturers.