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The onsemi 4N27TVM is a single-channel optoisolator featuring an infrared LED coupled to a phototransistor output with a base terminal. It provides 4170Vrms isolation voltage and operates within a -40°C to 100°C temperature range. The device utilizes a 6-DIP (0.400 inch) through-hole package. Key electrical parameters include a maximum forward current of 60 mA, a typical forward voltage of 1.18 V, and a collector-emitter saturation voltage of 300 mV. It offers a minimum current transfer ratio of 100% at 10 mA input and typical switching times of 2 µs for both turn-on and turn-off.
Verify the specific suffix 'TVM' corresponds to the tube packaging configuration as indicated in distributor listings. Confirm RoHS compliance status and REACH declaration requirements for your region. Ensure the 6-DIP pinout matches your PCB footprint design. Check for any recent PCN notifications regarding assembly location or material changes before finalizing procurement.
Select this component when base-controlled phototransistor outputs are required for faster switching than standard variants. Verify that the 4170Vrms isolation rating meets system safety standards. Consider the 6-DIP package constraints for board space. Compare current transfer ratio specifications against load requirements to ensure adequate drive capability under worst-case conditions.
The 4N27 series belongs to onsemi's established portfolio of general-purpose optocouplers. This family leverages mature BCD and discrete semiconductor technologies to deliver reliable isolation solutions. The 4N27TVM represents a specific variant within this lineage, maintaining compatibility with legacy designs while offering updated manufacturing standards and supply chain support from onsemi.
The 4N37TVM is a documented substitute part number within the same product family. Verify pinout compatibility and electrical parameter equivalence before substitution. Ensure the replacement maintains the required isolation voltage and package dimensions for your application.
The base terminal allows for external connection to improve switching speed and provide additional control over the phototransistor's operation.
The device supports an extended operating temperature range up to 100°C.