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The 4N28(SHORT,F) is a single-channel transistor output optocoupler manufactured by Toshiba Semiconductor and Storage. It features an infrared emitting diode coupled to an NPN phototransistor with a base lead for improved switching performance. The device provides electrical isolation with a maximum insulation voltage of 2500 Vrms. Key electrical parameters include a collector-emitter breakdown voltage of 30 V, a maximum forward current of 60 mA, and a nominal current transfer ratio of 100%. It operates within a temperature range of -55 °C to +100 °C and is housed in a standard 6-pin DIP package.
Verify the specific suffix (SHORT,F) against official Toshiba documentation to confirm pin configuration and packaging details. Ensure compliance with RoHS directives as indicated in component specifications. Cross-reference datasheet revision levels to guarantee parameter accuracy for design integration.
Select this component when base-driven phototransistor isolation is required for faster response times compared to standard variants. Confirm that the 30 V collector-emitter voltage rating meets circuit requirements. Evaluate thermal management needs given the operating temperature range up to +100 °C.
This part belongs to the 4Nxx series of transistor output optocouplers from Toshiba. These devices are widely used for general-purpose isolation applications. The SHORT designation typically indicates a specific internal die attachment or lead frame variation affecting physical dimensions or thermal characteristics, while F denotes tape-and-reel packaging.
Compatible substitutes include other single-channel transistor output optocouplers with similar isolation ratings and CTR values. Verify pinout compatibility and electrical limits before substitution.