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The 4N29S(TA) is a single-channel phototransistor output optocoupler manufactured by Everlight Electronics. It integrates an infrared emitting diode and a photodarlington transistor in a surface-mount SMD-6 package. Key electrical parameters include a maximum collector-emitter voltage of 55 V, a forward current of 60 mA, and a minimum current transfer ratio of 100%. The device provides 5000 Vrms isolation voltage and operates within a temperature range of -55°C to +100°C.
Verify the specific suffix (TA) against the manufacturer's latest documentation to confirm pinout and packaging specifications. Ensure the component meets required isolation voltage standards for the target application. Confirm availability status as distribution channels may vary. Cross-reference datasheet revisions to ensure compatibility with existing designs.
Select this component when high gain is required due to the photodarlington output structure. Consider the SMD-6 package for space-constrained PCB layouts. Evaluate the 5000 Vrms isolation rating against safety requirements. Compare rise and fall times if high-speed switching performance is critical for the application.
This part belongs to the family of transistor output optoisolators from Everlight Electronics. These devices are commonly used for galvanic isolation in industrial and consumer electronics. The SMD variant offers advantages in automated assembly and reduced footprint compared to through-hole equivalents.
Check for direct pin-compatible replacements such as the 4N29 DIP version or other Darlington output optocouplers with similar isolation ratings. Verify that substitute parts match the CTR and voltage specifications.