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The Fairchild Semiconductor 4N30M is a single-channel optocoupler featuring an aluminum gallium arsenide infrared LED coupled to a silicon planar phototransistor. It provides electrical isolation with a maximum insulation voltage of 7500 Vrms and a collector-emitter breakdown voltage of 30 V. The device supports a maximum forward current of 80 mA and offers a typical current transfer ratio of 100%. Operating within a temperature range of -40 °C to 100 °C, it utilizes a 6-DIP package.
Verify the manufacturer origin carefully, as the component is produced by multiple vendors including onsemi and Fairchild Semiconductor. Confirm that the specific unit matches the required datasheet specifications for insulation voltage and current transfer ratio. Ensure the package type corresponds to the design requirements before finalizing procurement orders.
Select this component when high isolation voltage is required alongside moderate speed performance. The 4N30M is suitable for applications needing galvanic isolation between low-voltage logic circuits and higher-voltage loads. Consider the package constraints and thermal operating limits during circuit design integration.
This component belongs to the widely used 4Nxx series of optocouplers. These devices are standard solutions for providing electrical isolation in electronic circuits. The 4N30M specifically offers robust isolation characteristics suitable for general-purpose industrial and commercial applications requiring reliable signal transmission across isolated boundaries.
The 4N29M and 4N33M are documented substitutes within the same product family. Verify pin compatibility and electrical parameter alignment before substituting these components in existing designs.