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The onsemi 4N32 is a single-channel phototransistor output optocoupler housed in a 6-pin DIP package. It features a GaAs infrared LED coupled to a silicon phototransistor for electrical isolation. Key electrical parameters include a maximum collector-emitter voltage of 30 V, a maximum collector current of 150 mA, and a reverse voltage rating of 3 V. The device supports a maximum forward current of 80 mA with a forward voltage of 1.5 V. It offers an insulation voltage of 4170 Vrms and operates within a temperature range of -40°C to +100°C.
Verify the specific suffix (e.g., M, VM, SM) to confirm package type and insulation ratings. Confirm RoHS compliance status via the manufacturer's official documentation or certificate. Ensure the selected variant matches the required operating temperature range and isolation voltage for the target application safety standards.
Select based on required isolation voltage and package style. The standard 4N32 typically uses a tube package, while variants like 4N32VM use bulk packaging. Check if the higher insulation voltage of 4170 Vrms is necessary compared to lower-rated alternatives. Ensure the phototransistor output speed meets the signal frequency requirements of the circuit design.
The 4N32 belongs to the widely used 4N3x series of general-purpose optocouplers manufactured by onsemi. This series is known for providing basic signal isolation in cost-sensitive applications. The component serves as a fundamental building block for separating low-voltage logic circuits from higher-voltage power stages.
Compatible substitutes include the HCPL-2630 or PC817 series, provided pinouts and electrical characteristics such as CTR and isolation voltage are verified against the original datasheet specifications.