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The 4N32-V is a single-channel photodarlington optocoupler manufactured by Everlight Electronics. It integrates an infrared emitting diode and a high-gain photodarlington output in a 6-pin DIP package. Key electrical parameters include a collector-emitter voltage of 55 V, a maximum forward current of 60 mA, and an isolation voltage of 5000 Vrms. The device features a typical current transfer ratio of 50% at 10 mA input and operates within a temperature range of -55°C to +100°C.
Verify the specific suffix 'V' against the manufacturer's official datasheet to confirm lead frame plating or tape-and-reel packaging specifications. Ensure compliance with RoHS directives as indicated in the component documentation. Cross-reference the full part number with authorized distributors to confirm availability and authenticity before procurement.
Select this component when high DC gain is required for driving loads directly from low-current logic outputs. The integrated base pin allows for faster turn-off times compared to standard photodarlington configurations without base access. Verify that the 55 V collector-emitter voltage rating meets the load requirements of the target application circuit.
This component belongs to the 4Nxx series of general-purpose optocouplers produced by Everlight Electronics. These devices are widely used in applications requiring electrical isolation between control circuits and higher voltage power stages. The 4N32 variant specifically distinguishes itself by providing a base connection to the phototransistor, offering improved performance characteristics over basic phototransistor isolators.
The 4N31 is a documented substitute within the same product family, sharing similar electrical characteristics and pinout configuration. Verify mechanical compatibility and specific parameter tolerances before substitution.