4N32300W

4N32300W

  • Description:OPTOISO 5.3KV DARL W/BASE 6-DIP
  • Series:-
  • Mfr:onsemi
  • Package:Tube

SKU:cf5dd9378dfa Category: Brand:

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Product Detailed Parameters

  • Description:OPTOISO 5.3KV DARL W/BASE 6-DIP
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Number of Channels:1
  • Voltage - Isolation:5300Vrms
  • Current Transfer Ratio (Min):500% @ 10mA
  • Current Transfer Ratio (Max):-
  • Turn On / Turn Off Time (Typ):5µs, 100µs (Max)
  • Rise / Fall Time (Typ):-
  • Input Type:DC
  • Output Type:Darlington with Base
  • Voltage - Output (Max):30V
  • Current - Output / Channel:150mA
  • Voltage - Forward (Vf) (Typ):1.2V
  • Current - DC Forward (If) (Max):80 mA
  • Vce Saturation (Max):1V
  • Operating Temperature:-55°C ~ 100°C
  • Mounting Type:Through Hole
  • Package / Case:6-DIP (0.400", 10.16mm)
  • Supplier Device Package:6-DIP

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4N32300W

Overview

The onsemi 4N32300W is a single-channel phototransistor output optocoupler housed in a 6-pin DIP package. It features a GaAs infrared LED coupled to a silicon photodarlington transistor with an accessible base terminal for sensitivity control. Key electrical parameters include a maximum collector-emitter voltage of 30 V, a peak forward current of 80 mA, and a typical forward voltage of 1.2 V. The device offers high isolation capabilities with a dielectric strength of 5300 Vrms and operates within a temperature range of -55°C to 100°C.

Feature Summary

  • Integrates a GaAs infrared emitting diode with a silicon photodarlington output for high gain and fast switching performance.
  • Includes an exposed base pin on the photodarlington transistor to allow external biasing or sensitivity adjustment.
  • Provides robust electrical isolation between input and output circuits via a 5300 Vrms dielectric barrier.

Applications

  • Industrial automation systems requiring signal isolation
  • Solid-state relay driver circuits
  • Microprocessor system interface isolation

Procurement Notes

Verify the specific suffix '300W' against the manufacturer's official datasheet to confirm it denotes the standard 4N32 variant with enhanced isolation ratings rather than a specialized industrial grade. Ensure the procurement specification matches the required 6-pin DIP through-hole package and confirms the 5300 Vrms insulation voltage rating for safety compliance.

Selection Notes

Select this component when high common-mode transient immunity and fast switching speeds are required compared to standard phototransistor couplers. The exposed base terminal provides design flexibility for optimizing response time or sensitivity in noisy environments. Verify that the 30 V collector-emitter voltage rating meets the load requirements of the target application circuit.

Part Context

This part belongs to the 4N32 series of optocouplers, which are designed for applications demanding higher speed and better linearity than basic phototransistor isolators. The series utilizes a photodarlington configuration to achieve high current transfer ratios while maintaining compact packaging suitable for dense PCB layouts.

Replacement Considerations

Direct substitutes include the 4N32M and 4N32VM from onsemi, which share identical pinouts and functional characteristics. Other manufacturers offer equivalent parts such as the HCPL-2630 or ILD2630, though pin compatibility and isolation voltage ratings must be verified before substitution.

FAQ

What is the purpose of the exposed base pin?

The exposed base pin allows users to connect external components to adjust the sensitivity or switching speed of the photodarlington output, providing greater design flexibility.

What is the maximum operating temperature?

The device is rated for operation up to 100°C, making it suitable for various industrial and commercial environments.

4N32300W4N32300W

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