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Product Detailed Parameters
- Description：OPTOISO 2.5KV DARL W/BASE 6-DIP
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tube
- Number of Channels：1
- Voltage - Isolation：2500Vrms
- Current Transfer Ratio (Min)：500% @ 10mA
- Current Transfer Ratio (Max)：-
- Turn On / Turn Off Time (Typ)：5µs, 100µs (Max)
- Rise / Fall Time (Typ)：-
- Input Type：DC
- Output Type：Darlington with Base
- Voltage - Output (Max)：30V
- Current - Output / Channel：100mA
- Voltage - Forward (Vf) (Typ)：1.15V
- Current - DC Forward (If) (Max)：80 mA
- Vce Saturation (Max)：1V
- Operating Temperature：-55°C ~ 100°C
- Mounting Type：Through Hole
- Package / Case：6-DIP (0.300", 7.62mm)
- Supplier Device Package：6-DIP
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Overview
The Toshiba 4N32(SHORT,F) is a single-channel optocoupler featuring a Darlington transistor output. It utilizes an infrared LED coupled to a high-gain Darlington phototransistor within a six-pin DIP package. The device provides electrical isolation with a rated insulation voltage of 2500 Vrms. Key electrical characteristics include a collector-emitter breakdown voltage of at least 30 V and a maximum forward current of 80 mA. The unit supports an operating temperature range from -55 °C to 100 °C.
Feature Summary
- High gain Darlington output configuration for enhanced signal transmission
- Optical isolation between input and output circuits
- Robust thermal performance across extended industrial temperature ranges
Applications
- Industrial control systems requiring galvanic isolation
- Signal transmission in noisy environments
- Power supply feedback loops
Procurement Notes
Verify the specific suffix designation against official Toshiba Semiconductor and Storage documentation to confirm exact packaging and compliance status. Ensure that the procurement source provides valid traceability for lead content and RoHS non-compliance as indicated in historical records. Confirm the active lifecycle status directly with the manufacturer before finalizing orders.
Selection Notes
Select this component when high current transfer ratio is required without external amplification. The Darlington output structure offers superior sensitivity compared to standard phototransistor outputs. Verify that the system voltage requirements align with the 30 V collector-emitter breakdown limit and that the isolation voltage meets the circuit safety standards.
Part Context
This part belongs to the 4N32 series of optocouplers manufactured by Toshiba Semiconductor and Storage. The series is designed for general-purpose isolation applications. The specific model variant indicates a particular pin configuration or packaging style within the broader product family, maintaining compatibility with standard DIP-6 footprints used in legacy and modern electronic designs.
Replacement Considerations
Direct substitutes include the 4N32A(TP4) and other variants within the 4N32 family. Verify pinout compatibility and electrical parameters such as CTR and isolation voltage before substitution.
