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The 4N35-V is a single-channel transistor output optocoupler manufactured by Everlight Electronics. It integrates an infrared emitting diode with an NPN phototransistor in a 6-pin DIP package. Key electrical parameters include a maximum collector-emitter voltage of 80 V, a forward current rating of 60 mA, and a minimum current transfer ratio of 100% at 10 mA. The device offers 5000 Vrms insulation voltage and operates within a temperature range of -55°C to +110°C.
Verify the specific suffix 'V' against the manufacturer's datasheet to confirm compliance with regional environmental directives such as RoHS. Ensure the ordering part number matches the required package style and pin configuration. Cross-reference the component marking with official Everlight documentation to authenticate the source and prevent counterfeit components.
Select this component when galvanic isolation is required between low-voltage control circuits and higher-voltage loads. The NPN phototransistor output is suitable for interfacing with standard digital logic families. Consider the 100% minimum CTR for reliable switching performance in signal transmission applications requiring moderate speed.
This component belongs to the 4N3X series of optocouplers from Everlight Electronics. The series includes variants like the 4N35, 4N36, 4N37, and 4N38, which share similar structural designs but may differ in specific electrical characteristics or packaging options. The 4N35-V represents a specific version within this family optimized for general-purpose isolation tasks.
Compatible substitutes include the 4N25, 4N26, 4N27, and 4N28 from the same manufacturer, as well as equivalent parts from other vendors that match the 6-pin DIP form factor and 5000 Vrms isolation rating.