Transistor, Photovoltaic Output Optoisolators 4N55#200 product image

4N55#200

$81.95
  • Description:OPTOISO 1.5KV TRANS W/BASE 16DIP
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tube

SKU:43722bb3cef7 Category: Brand:

  
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4N55#200 is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Broadcom Limited. Its product description is OPTOISO 1.5KV TRANS W/BASE 16DIP. Review the specifications below when checking this part for your BOM.

Transistor, Photovoltaic Output Optoisolators specifications for 4N55#200

  • Description:OPTOISO 1.5KV TRANS W/BASE 16DIP
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tube
  • Number of Channels:2
  • Voltage - Isolation:1500VDC
  • Current Transfer Ratio (Min):9% @ 16mA
  • Current Transfer Ratio (Max):-
  • Turn On / Turn Off Time (Typ):400ns, 1µs
  • Rise / Fall Time (Typ):-
  • Input Type:DC
  • Output Type:Transistor with Base
  • Voltage - Output (Max):18V
  • Current - Output / Channel:8mA
  • Voltage - Forward (Vf) (Typ):1.55V
  • Current - DC Forward (If) (Max):20 mA
  • Vce Saturation (Max):-
  • Operating Temperature:-55°C ~ 125°C
  • Mounting Type:Through Hole
  • Package / Case:16-DIP (0.300", 7.62mm)
  • Supplier Device Package:16-DIP
  • Grade:-
  • Qualification:-

Transistor, Photovoltaic Output Optoisolators datasheet and documents for 4N55#200

4N55#200

Transistor, Photovoltaic Output Optoisolators Overview

The Broadcom Limited 4N55#200 is a high-speed optocoupler featuring two independent channels within a CDIP-16 gull wing package. It utilizes phototransistor outputs with base connections to support data rates up to 400 kb/s and offers an isolation voltage of 1500 Vrms. Key electrical parameters include a forward current of 5 mA, a forward voltage of 1.55 V, and a maximum output current of 8 mA per channel. The device operates reliably across a temperature range from -55°C to +125°C, with a power dissipation rating of 200 mW.

Transistor, Photovoltaic Output Optoisolators Feature Summary

  • Dual-channel configuration for simultaneous signal isolation
  • Phototransistor outputs with integrated base terminals
  • High-speed operation supporting 400 kb/s data transmission
  • Robust insulation rated at 1500 Vrms

Transistor, Photovoltaic Output Optoisolators Applications

  • Industrial control systems requiring galvanic isolation
  • Signal interface circuits in noisy environments
  • Power supply feedback loops
  • Microcontroller input/output isolation

Transistor, Photovoltaic Output Optoisolators Procurement Notes

Verify the specific suffix #200 to ensure the correct through-hole CDIP-16 packaging variant. Confirm that the required operating temperature range aligns with the specified -55°C to +125°C limits. Ensure circuit designs account for the 5 mA forward current and 8 mA output current constraints. Cross-reference the datasheet for exact timing characteristics relevant to the target application speed.

Transistor, Photovoltaic Output Optoisolators Selection Notes

Select this component when dual-channel isolation is necessary within a single package footprint. The phototransistor output type is suitable for general-purpose switching applications. Consider the 1500 Vrms isolation barrier for safety-critical interfaces. The wide operating temperature range makes it appropriate for harsh industrial environments compared to standard commercial-grade alternatives.

Transistor, Photovoltaic Output Optoisolators Part Context

The 4N55#200 belongs to the 4N series of high-speed optocouplers manufactured by Broadcom Limited. This series is designed for applications requiring reliable signal transfer across isolated boundaries. The part integrates an infrared emitting diode with phototransistor detectors on a common substrate, ensuring compact design and consistent performance characteristics across the product line.

Transistor, Photovoltaic Output Optoisolators Replacement Considerations

The 4N55/883B is listed as a parameter-equivalent alternative. Verify pinout compatibility and package dimensions before substitution. Ensure the replacement meets the same 1500 Vrms isolation and 400 kb/s data rate requirements.

4N55#2004N55#200
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