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The Broadcom Limited 5082-3039 is a general-purpose PIN diode designed for RF switching and attenuating applications. It features a junction operating temperature range of -65°C to +150°C and a power dissipation rating of 250 mW at 25°C. The device has a peak inverse voltage (breakdown voltage) of 150 V, a maximum residual series resistance of 1.25 Ω at 100 mA forward current, and a total capacitance of 0.25 pF measured at 50 V reverse bias. Effective carrier lifetime is specified as a minimum of 100 ns.
Verify the component status carefully before procurement. Official documentation indicates that this product line may be subject to discontinuation notices. Confirm availability through authorized distributors and check for any Product Change Notices (PCN) related to manufacturing origin or material composition updates prior to finalizing orders.
Select the 5082-3039 when a breakdown voltage of 150 V and low capacitance are required. Ensure the application operates within the 250 mW power dissipation limit and derates linearly as temperature approaches 150°C. Verify that the 100 ns effective carrier lifetime meets the speed requirements for the specific switching or attenuation topology.
This component belongs to the 5082-3zzz series of PIN diodes manufactured by Broadcom Limited (formerly Avago Technologies). The series includes variants optimized for different frequency bands and carrier lifetimes. The 5082-3039 specifically targets general-purpose switching and attenuating roles within the broader family of RF control devices.
The datasheet lists the 1N5719 as an electrically equivalent alternative within the same package outline. Both share identical electrical specifications for breakdown voltage, series resistance, and capacitance. Substitution should verify package compatibility and lead finish requirements.