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The IRF640B is an N-channel silicon power MOSFET manufactured by Rochester Electronics. It features a TO-220AB package with three pins. Key electrical parameters include a drain-source breakdown voltage of 200 V, a continuous drain current of 18 A, and a maximum on-resistance of 0.18 Ω. The device has a single configuration with a built-in diode and an avalanche energy rating of 250 mJ.
Verify the specific manufacturer lot and date code upon receipt, as Rochester Electronics often distributes components sourced from other original equipment manufacturers. Confirm that the TO-220AB package dimensions match your PCB footprint requirements. Ensure compliance with project-specific lead-free or RoHS standards if applicable, noting that some listings indicate non-compliance with certain environmental directives.
Select this component for designs requiring robust N-channel switching at 200V with moderate current handling up to 18A. The 0.18 Ω on-resistance offers a balance between conduction loss and cost. Consider the thermal management capabilities of the TO-220AB package for high-power dissipation scenarios. Verify gate drive compatibility for optimal switching performance.
Rochester Electronics specializes in sourcing and distributing obsolete and hard-to-find electronic components. The IRF640B is part of their portfolio of power discrete semiconductors, providing continuity for legacy designs originally utilizing Fairchild or International Rectifier parts. This component serves as a replacement for older N-channel MOSFETs in established industrial and consumer electronics systems.
Publicly confirmed substitute part numbers are not explicitly listed in the provided source material for direct cross-reference.