SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 5962-8753101TA is a high-speed asynchronous FIFO memory device manufactured by Renesas Electronics Corporation. It features a data organization of 512 words by 9 bits and supports an access time of 30 nanoseconds. The component operates on a single 5.0V supply voltage within the range of 4.5V to 5.5V. It is housed in a 28-pin Ceramic Dual In-Line Package (CDIP) designed for through-hole mounting. This military-grade part is pin and functionally compatible with the IDT 720X family, offering ultra-high speed performance with simultaneous read and write capabilities.
Verify the specific suffix TA indicates the CDIP package configuration. Confirm RoHS compliance status as some sources indicate lead-free construction while others may vary. Ensure the procurement channel provides valid traceability documentation required for military-grade components. Check for any export control restrictions associated with the 5962 prefix designation before finalizing orders.
Select this component when a 512x9 word depth is required for temporary data storage. Choose this part if simultaneous read/write operations are necessary without bus contention. Consider this device for applications requiring 30ns access speed in a through-hole ceramic package. Verify that the 5.0V logic levels match the system interface requirements.
This component belongs to the 5962-87531 family of asynchronous FIFO memories. It serves as a direct replacement for similar devices from Integrated Device Technology (IDT), specifically the 7201 series. The part is designed for high-reliability applications where consistent performance and durability are critical. It represents a specialized memory solution distinct from standard SRAM or ROM technologies.