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Product Detailed Parameters
- Description：IC NVSRAM 64KBIT PARALLEL 28CDIP
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- Memory Type：Non-Volatile
- Memory Format：NVSRAM
- Technology：NVSRAM (Non-Volatile SRAM)
- Memory Size：64Kbit
- Memory Organization：8K x 8
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：55ns
- Voltage - Supply：4.5V ~ 5.5V
- Operating Temperature：-55°C ~ 125°C (TA)
- Mounting Type：Through Hole
- Package / Case：28-CDIP (0.300", 7.62mm)
- Supplier Device Package：28-CDIP
- Access Time：55 ns
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Overview
The Infineon Technologies 5962-9459901MXA is a military-grade AutoStore nvSRAM with a 64 Kbit (8 K x 8) capacity. It features parallel interface access times of 35 ns or 55 ns and operates on a single 5 V power supply within the 4.5 V to 5.5 V range. The device supports a military temperature range from -55 °C to +125 °C and offers 1,000,000 STORE cycles with 100-year data retention.
Feature Summary
- Integrates fast static RAM with QuantumTrap nonvolatile elements for unlimited read/write cycles and high endurance.
- Provides automatic STORE operation upon power loss using an external capacitor connected to the VCAP pin.
- Supports hardware STORE via the HSB pin and software STORE/RECALL initiated by specific address sequences.
Applications
- Military avionics systems requiring reliable data storage under extreme temperatures
- Industrial control systems needing protection against unexpected power failures
- Automotive electronics demanding high reliability and long-term data retention
Procurement Notes
Verify that the ordering suffix 'M' corresponds to the military temperature grade (-55 °C to +125 °C) and confirm the package type matches your design requirements. Ensure the external VCAP capacitor value falls between 68 µF and 220 µF at 6 V to support the AutoStore function correctly.
Selection Notes
Select this component when system reliability requires preserving volatile memory contents during power interruptions without battery backup. It is suitable for applications where unlimited SRAM write cycles are needed alongside nonvolatile storage capabilities. Consider the 35 ns or 55 ns speed grades based on system timing constraints.
Part Context
This part belongs to the STK12C68 series of AutoStore nvSRAMs manufactured by Cypress Semiconductor, now part of Infineon Technologies. The series utilizes QuantumTrap technology to embed nonvolatile cells directly into the SRAM array, providing a seamless replacement for standard SRAM in critical data storage applications.
Replacement Considerations
Direct replacements include other parts within the STK12C68 family with matching speed grades and packages. Verify pin compatibility and ensure the replacement supports the required military temperature range and voltage specifications.
FAQ
How is the AutoStore function triggered?
AutoStore is triggered automatically when the VCC voltage drops below the VSWITCH threshold during power loss, utilizing charge stored in the external VCAP capacitor to save data.
What is the purpose of the HSB pin?
The HSB pin allows for hardware-initiated STORE operations and indicates when a STORE cycle is in progress by driving low.
Can the STORE operation be inhibited?
Yes, AutoStore can be disabled by tying VCC to ground and applying +5 V to VCAP, or by holding the HSB pin high with a driver capable of sourcing sufficient current.
