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The Infineon Technologies 5962F1123501QXA is a military-grade, radiation-hardened static RAM organized as 512 K words by 8 bits. It utilizes RadStop™ technology for enhanced reliability in space environments and holds DLAM QML certification. The device operates within a temperature range of –55 °C to +125 °C with a supply voltage of 3.3 V ± 0.3 V. Key electrical parameters include a maximum access time of 12 ns, a maximum active current of 95 mA, and a standby current of 15 mA. Data retention is supported down to 2.0 V.
Verify the specific ordering suffix against official Cypress/Infineon documentation to confirm the exact processing flow and qualification grade. Ensure that the procurement channel provides traceability to the original manufacturer's quality standards. Confirm that the component lot meets the required MIL-PRF 38535 specifications for the intended aerospace application.
Select this component for designs requiring high-speed asynchronous SRAM with proven single-event effect resilience. The 36-pin ceramic flat package offers a robust solution for harsh environments. Consider the 12 ns access speed and low standby power characteristics when evaluating system performance and thermal constraints.
This part belongs to the CYRS1049DV33 family of 4-Mbit Static RAMs featuring RadStop™ technology. Manufactured originally by Cypress Semiconductor, these devices are now managed under Infineon Technologies' portfolio. The product line is specifically engineered to meet the rigorous demands of aerospace and defense applications where radiation tolerance is critical.
The 5962F1123501VXA serves as a verified alternative within the same DLAM certified family. Both variants share identical functional specifications and pinouts while maintaining the required radiation hardness levels for space missions.