6116LA120DB

6116LA120DB

$15.46
  • Description:IC SRAM 16KBIT PARALLEL 24CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:80a5bc047915 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 16KBIT PARALLEL 24CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:16Kbit
  • Memory Organization:2K x 8
  • Memory Interface:Parallel
  • Write Cycle Time - Word, Page:120ns
  • Voltage - Supply:4.5V ~ 5.5V
  • Operating Temperature:-55°C ~ 125°C (TA)
  • Mounting Type:Through Hole
  • Package / Case:24-CDIP (0.600", 15.24mm)
  • Supplier Device Package:24-CDIP
  • Access Time:120 ns

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6116LA120DB

Overview

The Renesas Electronics Corporation 6116LA120DB is a 16K-bit (2K x 8) asynchronous static random-access memory (SRAM) IC. It operates within a supply voltage range of 4.5V to 5.5V and features a maximum access time of 120ns. The component utilizes a parallel interface and is housed in a 24-pin CDIP package for through-hole mounting. Designed for low-power applications, it includes a reduced power standby mode. The device is currently classified as obsolete and no longer manufactured by the supplier.

Feature Summary

  • Provides 16K-bit non-volatile data storage organized as 2K words by 8 bits using CMOS technology.
  • Incorporates a low-power architecture with a dedicated reduced power standby mode for battery backup scenarios.

Applications

  • Industrial control systems requiring reliable data retention
  • Embedded systems utilizing legacy through-hole mounting standards
  • Battery-backed memory circuits for critical data preservation

Procurement Notes

This component is officially listed as obsolete and has been discontinued by Renesas Electronics Corporation. Procurement must rely on remaining stock from authorized distributors or secondary market suppliers. Verify part authenticity carefully due to potential availability of refurbished units. Confirm package integrity and pin condition prior to integration into new designs.

Selection Notes

Engineers should evaluate this part only for maintenance of existing equipment where redesign is not feasible. For new projects, select modern equivalents with improved speed, lower power consumption, and current manufacturing support. Consider surface-mount alternatives if board space allows. Ensure compatibility with existing 5V logic levels and parallel interface requirements when sourcing substitutes.

Part Context

The 6116LA series represents a line of high-speed, low-power CMOS SRAMs produced by Renesas (formerly IDT). The 6116LA120DB specifically denotes the 120ns access time variant in a ceramic dual in-line package. This family was widely used in older computing and industrial hardware before the prevalence of dense flash and SMD memory solutions.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. As the device is obsolete, direct replacements may require functional equivalence verification across speed, voltage, and package dimensions.

6116LA120DB6116LA120DB
$15.46
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