6116LA150DB

6116LA150DB

  • Description:IC SRAM 16KBIT PARALLEL 24CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:75a84974d97c Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 16KBIT PARALLEL 24CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:16Kbit
  • Memory Organization:2K x 8
  • Memory Interface:Parallel
  • Write Cycle Time - Word, Page:150ns
  • Voltage - Supply:4.5V ~ 5.5V
  • Operating Temperature:-55°C ~ 125°C (TA)
  • Mounting Type:Through Hole
  • Package / Case:24-CDIP (0.600", 15.24mm)
  • Supplier Device Package:24-CDIP
  • Access Time:150 ns

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6116LA150DB

Overview

The Renesas Electronics Corporation 6116LA150DB is a 16 Kbit (2K x 8) asynchronous static random-access memory (SRAM) device. It operates within a supply voltage range of 4.5 V to 5.5 V and features a maximum access time of 15 ns. The component supports low-power standby modes and offers battery backup data retention capabilities, consuming only 1 μW to 4 μW in retention mode. It utilizes TTL-compatible inputs and outputs with fully static asynchronous circuitry, eliminating the need for clocks or refreshing. The device is housed in a surface-mount SOIC-24 package.

Feature Summary

  • Low-power architecture with reduced standby current consumption
  • Battery backup data retention capability for extended power loss scenarios
  • TTL-compatible inputs and outputs for broad interface compatibility
  • Fully static asynchronous operation requiring no clock signals

Applications

  • Industrial control systems requiring non-volatile-like data storage without refresh cycles
  • Embedded systems utilizing battery-backed memory for critical parameter retention
  • Consumer electronics needing fast asynchronous data buffering
  • Automotive applications compatible with standard 5V logic levels

Procurement Notes

Verify end-of-life status and discontinuation notifications prior to procurement. Confirm that the specific suffix denotes the correct package type and temperature range. Ensure compatibility with existing PCB footprints and voltage levels. Check for available alternative sources due to potential supply constraints. Validate RoHS compliance requirements against project specifications.

Selection Notes

Select this component when a 15 ns access time is required for 2K x 8 SRAM configurations. Consider the low-power standby and battery retention features if power efficiency during idle states is critical. Ensure the design accommodates the 4.5 V to 5.5 V operating range. Verify that the SOIC-24 surface-mount package fits the assembly constraints. Compare against other 6116 variants if different access speeds or packages are needed.

Part Context

This part belongs to the Renesas 6116 series of CMOS static RAMs. The series provides various access times and package options for 16 Kbit memory applications. The 'LA' designation typically indicates low-power characteristics with battery backup support. These devices are widely used in legacy and industrial systems requiring reliable, fast, and simple asynchronous memory solutions.

Replacement Considerations

Check for direct pin-compatible replacements within the 6116 family, such as the 6116SA15TPG for through-hole applications. Verify that any substitute maintains the 15 ns access speed and 5V logic compatibility. Ensure the replacement supports the same low-power and battery retention features if required by the design.

6116LA150DB6116LA150DB

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