6116LA150TDB

6116LA150TDB

  • Description:IC SRAM 16KBIT PARALLEL 24CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:73a4692232f3 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 16KBIT PARALLEL 24CDIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:16Kbit
  • Memory Organization:2K x 8
  • Memory Interface:Parallel
  • Write Cycle Time - Word, Page:150ns
  • Voltage - Supply:4.5V ~ 5.5V
  • Operating Temperature:-55°C ~ 125°C (TA)
  • Mounting Type:Through Hole
  • Package / Case:24-CDIP (0.300", 7.62mm)
  • Supplier Device Package:24-CDIP
  • Access Time:150 ns

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6116LA150TDB

Overview

The Renesas Electronics Corporation 6116LA150TDB is a 16-kbit asynchronous static random-access memory (SRAM) organized as 2K x 8 bits. It features a parallel interface with an access time of 150 ns. The device operates within a supply voltage range of 4.5 V to 5.5 V and supports through-hole mounting in a CDIP-24 package. It has a lead count of 24 pins and is classified under the 6116LA series.

Feature Summary

  • Asynchronous SRAM architecture for standard data storage applications
  • Parallel interface supporting high-speed data transfer operations
  • Wide operating temperature range suitable for industrial environments

Applications

  • Industrial control systems requiring reliable volatile memory
  • Embedded systems utilizing asynchronous bus architectures
  • Legacy hardware maintenance and replacement projects

Procurement Notes

Verify component authenticity due to end-of-life status. Confirm RoHS compliance requirements as documentation indicates non-compliance. Check for export restrictions or additional documentation needed for international shipping. Validate package integrity upon receipt to ensure pin alignment matches CDIP-24 specifications.

Selection Notes

Select this part when a 150 ns access time is sufficient for the target application. Ensure the design accommodates the CDIP-24 through-hole form factor. Verify that the system power supply remains stable between 4.5 V and 5.5 V. Consider the industrial temperature range if environmental conditions vary significantly.

Part Context

This component belongs to the Renesas 6116LA series of asynchronous SRAMs. It shares the 16 kbit capacity and 2K x 8 organization with other members of the family, differing primarily in access speed and packaging options. The TDB suffix denotes the specific CDIP-24 through-hole package configuration.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the end-of-life status, direct replacements may require redesigning the PCB footprint or adapting to surface-mount alternatives from the same manufacturer family.

6116LA150TDB6116LA150TDB

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