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The Renesas Electronics Corporation 6116LA150TDB is a 16-kbit asynchronous static random-access memory (SRAM) organized as 2K x 8 bits. It features a parallel interface with an access time of 150 ns. The device operates within a supply voltage range of 4.5 V to 5.5 V and supports through-hole mounting in a CDIP-24 package. It has a lead count of 24 pins and is classified under the 6116LA series.
Verify component authenticity due to end-of-life status. Confirm RoHS compliance requirements as documentation indicates non-compliance. Check for export restrictions or additional documentation needed for international shipping. Validate package integrity upon receipt to ensure pin alignment matches CDIP-24 specifications.
Select this part when a 150 ns access time is sufficient for the target application. Ensure the design accommodates the CDIP-24 through-hole form factor. Verify that the system power supply remains stable between 4.5 V and 5.5 V. Consider the industrial temperature range if environmental conditions vary significantly.
This component belongs to the Renesas 6116LA series of asynchronous SRAMs. It shares the 16 kbit capacity and 2K x 8 organization with other members of the family, differing primarily in access speed and packaging options. The TDB suffix denotes the specific CDIP-24 through-hole package configuration.
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the end-of-life status, direct replacements may require redesigning the PCB footprint or adapting to surface-mount alternatives from the same manufacturer family.