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The IDT6116LA20SO is a 16K-bit (2K x 8) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It operates within a supply voltage range of 4.5V to 5.5V and features a maximum access time of 20ns. The device utilizes a parallel interface and is housed in a 24-SOIC surface-mount package with a width of 7.50mm. Designed for commercial applications, it supports an operating temperature range from 0°C to 70°C. This low-power variant includes a reduced power standby mode and offers battery backup data retention capabilities.
Verify component authenticity as the manufacturer has issued product change notices regarding labeling updates. Confirm RoHS compliance status, as specific variants may differ in regulatory adherence. Check for end-of-life notifications, as this part number may be discontinued or subject to obsolescence management procedures. Ensure the supplier provides valid traceability documentation for quality assurance purposes.
Select this component when a 2Kx8 organization with 20ns speed is required in a 24-pin SOIC package. Consider the LA suffix for low-power and battery backup features if power efficiency is a priority. Verify that the system environment remains within the 0°C to 70°C commercial temperature range. Ensure the design accommodates the 4.5V to 5.5V supply voltage requirements and TTL-compatible I/O levels.
This device belongs to the 6116 family of 5V CMOS SRAMs, which are organized as 2K x 8 bits. The family offers various access times and packaging options to suit different performance and form-factor needs. The LA designation specifically indicates the low-power version with enhanced standby characteristics compared to standard variants.
Publicly confirmed substitute part numbers include 6116LA25SOG8 and 6116LA25SOGI8 from Renesas Electronics Corporation. These alternatives offer similar functionality but may have different access times or packaging configurations. Verify pin compatibility and electrical specifications before substitution.