6116LA25TBD

6116LA25TBD

$11.05
  • Description:IC SRAM 16KBIT PARALLEL 24CDIP
  • Series:-
  • Mfr:IDT, Integrated Device Technology Inc
  • Package:Bulk

SKU:00bf1fb4ec7e Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 16KBIT PARALLEL 24CDIP
  • Series:-
  • Mfr:IDT, Integrated Device Technology Inc
  • Package:Bulk
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:16Kbit
  • Memory Organization:2K x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:25ns
  • Voltage - Supply:4.5V ~ 5.5V
  • Operating Temperature:-55°C ~ 125°C (TA)
  • Mounting Type:Through Hole
  • Package / Case:24-CDIP (0.300", 7.62mm)
  • Supplier Device Package:24-CDIP
  • Access Time:25 ns

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6116LA25TBD

Overview

The IDT6116LA25TBD is a standard static random-access memory (SRAM) integrated circuit manufactured by Integrated Device Technology. It features a memory density of 16,384 bits organized as 2K words by 8 bits. The device utilizes CMOS technology and operates in an asynchronous mode with a maximum access time of 25 nanoseconds. It is housed in a 24-pin ceramic dual in-line package (CDIP) with a 0.300-inch body width. The component supports three-state outputs and functions within a temperature range of -55°C to 125°C.

Feature Summary

  • High-speed asynchronous operation with 25ns access time
  • Military-grade extended temperature range capability
  • Ceramic dual in-line packaging for reliability
  • Three-state output buffering

Applications

  • Industrial control systems requiring high reliability
  • Aerospace and defense electronic equipment
  • Harsh environment data storage applications

Procurement Notes

Verify the manufacturer designation on the component marking to confirm it originates from Integrated Device Technology or its successor entity. Ensure the part number suffix matches the specific package and temperature grade requirements. Check for compliance with relevant export control classifications such as EAR99. Confirm that the ceramic DIP package dimensions align with the target PCB footprint specifications before procurement.

Selection Notes

Select this component when a robust SRAM solution is required for environments with extreme thermal variations. The ceramic package offers superior durability compared to plastic alternatives. Consider the 25ns speed if higher performance is not critical but cost-effectiveness in legacy formats is desired. Evaluate the 2Kx8 organization against system memory architecture needs to ensure compatibility with existing bus structures.

Part Context

This part belongs to the IDT6116SA/LA family of high-speed static RAMs. The family includes variants with different access times and package options, such as the 55ns version. These devices are designed for applications demanding high reliability and performance. The LA series specifically denotes extended temperature ranges suitable for industrial and military use cases.

Replacement Considerations

The IDT6116LA55DB serves as a slower alternative within the same family. Verify pinout compatibility and electrical characteristics before substitution. Ensure the replacement part meets the required temperature range and package specifications.

6116LA25TBD6116LA25TBD
$11.05
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