6116LA25TDB

Overview

The Renesas Electronics Corporation 6116LA25TDB is a 16 kbit Asynchronous Static Random Access Memory (SRAM) device. It features a memory organization of 2K x 8 bits and provides an access time of 25 ns. The component operates within a supply voltage range of 4.5 V to 5.5 V, with a maximum power supply current of 90 mA. It supports parallel interface communication and is housed in a 24-lead Ceramic Dual In-Line Package (CDIP). The device is rated for an industrial temperature range from -55°C to +125°C.

Feature Summary

• High-speed asynchronous data access capabilities
• Robust ceramic packaging for harsh environments
• Wide operating temperature range support

Applications

• Industrial control systems requiring high reliability
• Military and aerospace electronic equipment
• Harsh environment data storage applications

Procurement Notes

Verify the specific package variant, as CDIP differs significantly from SOIC pinouts and thermal properties. Confirm RoHS compliance status directly with the manufacturer or authorized distributors, as legacy components may have varying environmental declarations. Check for End-of-Life notices or Production Change Notices that may affect long-term availability and sourcing strategies.

Selection Notes

Select this component when wide temperature operation and radiation hardness are required. The CDIP package offers superior mechanical stability compared to plastic packages. Ensure the design accommodates the through-hole mounting style and verify that the 25 ns access time meets the system timing requirements.

Part Context

This part belongs to the 6116LA series of high-speed, low-power SRAMs. It shares architectural similarities with other variants in the family but is distinguished by its ceramic dual in-line package and extended temperature rating. The series is designed for applications demanding reliable data retention and fast read/write cycles.

Replacement Considerations

Public confirmed substitute part numbers: IDT6116LA25TDB.