6116LA25TPG

6116LA25TPG

  • Description:IC SRAM 16KBIT PARALLEL 24DIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:901375aef1dc Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 16KBIT PARALLEL 24DIP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:16Kbit
  • Memory Organization:2K x 8
  • Memory Interface:Parallel
  • Write Cycle Time - Word, Page:25ns
  • Voltage - Supply:4.5V ~ 5.5V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Through Hole
  • Package / Case:24-DIP (0.300", 7.62mm)
  • Supplier Device Package:24-PDIP
  • Access Time:25 ns

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6116LA25TPG

Overview

The Renesas Electronics Corporation 6116LA25TPG is a CMOS Static RAM organized as 16K bits (2K x 8). It features an asynchronous parallel interface with a maximum access time of 25 ns. The device operates within a supply voltage range of 4.5 V to 5.5 V and supports a maximum power consumption of 95 mA. It is housed in a 24-pin Dual In-Line Package (PDIP) and is designed for industrial temperature ranges from -40°C to +85°C.

Feature Summary

  • Supports reduced power standby mode for energy efficiency
  • Includes battery backup data retention capability
  • Utilizes high-performance, high-reliability CMOS fabrication

Applications

  • Industrial control systems requiring non-volatile-like data retention via battery backup
  • Embedded memory solutions in consumer electronics
  • General-purpose asynchronous data storage in hardware designs

Procurement Notes

Verify the End-of-Life status before procurement, as this component may be discontinued by the manufacturer. Confirm that the 24-PDIP package is compatible with your existing PCB footprint or requires redesign. Ensure that the 25 ns access time meets your system's timing requirements. Check for available qualified substitutes if production continuity is critical.

Selection Notes

Select this part when a 2K x 8 SRAM organization with 25 ns speed is required in a through-hole DIP package. Compare against the SOIC variant (6116LA25SOGI) if surface mount technology is preferred. Consider the 20 ns version (6116LA20TPG) if faster performance is needed and fits the thermal budget. Verify RoHS compliance requirements for your specific market regulations.

Part Context

This component belongs to the 6116LA series of low-power static random-access memories. The 'LA' designation indicates the low-power variant with standby capabilities. It is part of a broader family including SA (standard power) variants and different speed grades. The TPG suffix specifically denotes the 24-lead PDIP package configuration.

Replacement Considerations

Public confirmed substitute part numbers include IDT6116LA25TPG.

6116LA25TPG6116LA25TPG

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