6116LA35TDB

Overview

The IDT6116LA35TDB is a 16Kb (2K x 8) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features parallel interface with 35ns access time and write cycle time. The device operates on a 4.5V to 5.5V supply voltage and is housed in a 24-lead Ceramic Dual In-Line Package (CDIP). It supports an industrial temperature range of -40°C to 85°C.

Feature Summary

• Fully static asynchronous circuitry for reliable data retention without clock signals
• TTL-compatible inputs and outputs for direct integration with digital logic systems
• Parallel memory interface supporting standard word/page write operations

Applications

• Industrial control systems requiring robust memory storage
• Embedded applications utilizing TTL-compatible logic families
• Data buffering in asynchronous communication interfaces

Procurement Notes

Verify component authenticity through authorized distributors or official Renesas channels due to end-of-life status. Confirm package integrity as CDIP units may have specific handling requirements. Cross-reference datasheet revisions to ensure compatibility with current design specifications before procurement.

Selection Notes

Select this component when a 16Kb capacity with 35ns speed is required in a ceramic dual-in-line form factor. Ensure the design accommodates the 4.5V to 5.5V operating range and industrial temperature specifications. Consider pinout compatibility if replacing older IDT variants.

Part Context

This part belongs to the IDT6116 family of asynchronous SRAMs, characterized by high-speed parallel access and TTL compatibility. The LA suffix typically denotes extended temperature ranges compared to commercial variants. It serves as a legacy solution for systems requiring non-volatile-like stability without power, though it remains volatile.

Replacement Considerations

Public confirmed substitute: 6116LA25SOG8. Verify pinout and electrical parameter compatibility before substitution.