6116LA45TDB

Overview

The IDT6116LA45TDB is a 16Kb (2K x 8) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a parallel interface with a maximum access time of 45 ns and a write cycle time of 45 ns. The device operates within a supply voltage range of 4.5V to 5.5V and supports through-hole installation in a 24-CDIP package. It is designed for industrial temperature ranges, typically operating between -55°C and +125°C.

Feature Summary

• Low-power standby mode reduces active consumption significantly
• Battery backup data retention capability for extended power loss scenarios
• Fully static asynchronous architecture requiring no clock or refresh cycles
• TTL-compatible inputs and outputs for direct logic interfacing

Applications

• Industrial control systems requiring non-volatile-like data retention via battery backup
• Military-grade embedded applications demanding wide temperature stability
• Asynchronous memory buffers in legacy parallel bus architectures
• Data logging modules where power interruption protection is critical

Procurement Notes

Verify component authenticity due to discontinuation status. Confirm RoHS compliance requirements as the part may not meet current standards. Validate package integrity for CDIP-24 housing. Check for lead-free alternatives if environmental regulations apply. Ensure supplier documentation matches the specific LA suffix for low-power variants.

Selection Notes

Select this component when battery-backed SRAM functionality is required in a through-hole package. The 45 ns speed suits moderate-speed asynchronous interfaces. Consider the 2Kx8 organization for simple data storage needs. Evaluate thermal management for high-temperature military environments. Compare against faster access times if system latency permits higher-speed alternatives.

Part Context

This part belongs to the 6116 family of CMOS SRAMs, offering reduced power standby modes. The LA variant specifically supports battery backup data retention, consuming minimal current when powered by a secondary source. It complements standard 6116SA models by providing enhanced power efficiency and retention capabilities for specialized embedded memory applications.

Replacement Considerations

Publicly confirmed substitutes include IDT6116LA45DB and 6116LA45TDB. Verify pin compatibility and electrical specifications before substitution. Ensure the replacement maintains the same low-power standby and battery backup features.