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Product Detailed Parameters
- Description：IC SRAM 16KBIT PARALLEL 24CDIP
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tray
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：16Kbit
- Memory Organization：2K x 8
- Memory Interface：Parallel
- Write Cycle Time - Word, Page：55ns
- Voltage - Supply：4.5V ~ 5.5V
- Operating Temperature：-55°C ~ 125°C (TA)
- Mounting Type：Through Hole
- Package / Case：24-CDIP (0.300", 7.62mm)
- Supplier Device Package：24-CDIP
- Access Time：55 ns
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Overview
The Renesas 6116LA55TDB is a 16-kbit (2K x 8) asynchronous static random-access memory (SRAM) IC. It operates within a supply voltage range of 4.5V to 5.5V and features a maximum access time of 55 ns. The device utilizes parallel interface technology and is housed in a 24-lead ceramic dual in-line package (CDIP). It supports an operating temperature range from -40°C to +85°C, indicating suitability for industrial or military environments.
Feature Summary
- Low-power standby mode with battery backup data retention capability
- Fully static asynchronous operation requiring no clocks or refreshing
- TTL-compatible inputs and outputs
Applications
- Industrial control systems
- Military grade electronic equipment
- Battery-backed memory storage applications
Procurement Notes
Verify the specific package variant, as the suffix TDB denotes a ceramic CDIP package which may differ from plastic SOIC or DIP versions. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Check current production status as older SRAM families may be subject to discontinuation notices.
Selection Notes
Select this component when a low-power, battery-backup capable SRAM is required for harsh environmental conditions. The 55 ns speed is suitable for moderate-speed asynchronous interfaces. Ensure the design accommodates the larger physical footprint of the ceramic CDIP package compared to standard plastic packages.
Part Context
This part belongs to the 6116LA series of low-power CMOS SRAMs. It shares architectural similarities with other 16Kb devices like the 6116LA25 but offers slower access speeds in exchange for potentially lower power consumption in standby modes. The LA designation specifically indicates the inclusion of battery backup functionality.
Replacement Considerations
Direct replacements include other 6116LA series variants such as 6116LA25 or 6116LA35 if speed requirements allow. Verify pin compatibility and package dimensions before substituting with different package types like SOIC or PDIP.
